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| DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES * High speed switching * Interchangeability of drain and source connections * Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA J111 Drain-source voltage Drain current VDS = 15 V; VGS = 0 Total power dissipation up to Tamb = 50 C Gate-source cut-off voltage VDS = 5 V; ID = 1 A Drain-source on-state resistance VDS = 0.1 V; VGS = 0 RDS on max. 30 50 100 -VGS off min. max. 3 10 1 5 0.5 3 V V Ptot max. 400 400 400 mW IDSS min. 20 5 2 mA VDS max. 40 J112 40 J113 40 V July 1993 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate forward current (DC) Total power dissipation up to Tamb = 50 C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified J111 Gate reverse current -VGS = 15 V; VDS = 0 Drain cut-off current VDS = 5 V; -VGS = 10 V Drain saturation current VDS = 15 V; VGS = 0 Gate-source breakdown voltage -IG = 1 A; VDS = 0 Gate-source cut-off voltage VDS = 5 V; ID = 1 A Drain-source on-state resistance VDS = 0.1 V; VGS = 0 RDSon max. 30 -VGS off min. max. 3 10 -V(BR)GSS min. 40 IDSS min. 20 -IDSX max. 1 -IGSS max. 1 Rth j-a = Ptot Tstg Tj max. max. VDS -VGSO -VGDO IG max. max. max. max. J111; J112; J113 40 V 40 V 40 V 50 mA 400 mW -65 to + 150 C 150 C 250 K/W J112 1 1 5 40 1 5 50 J113 1 1 2 40 0.5 3 100 nA nA mA V V V July 1993 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified Input capacitance VDS = 0; -VGS = 10 V; f = 1 MHz VDS = -VGS = 0; f = 1 MHz Feedback capacitance VDS = 0; -VGS = 10 V; f = 1 MHz Switching times test conditions VDD = 10 V; VGS = 0 to VGSoff -VGS off = 12 V; RL = 750 for J111 -VGS off = 7 V; RL = 1550 for J112 -VGS off = 5 V; RL = 3150 for J113 Rise time Turn-on time Fall time Turn-off time tr ton tf toff typ. typ. typ. typ. Crs typ. Cis Cis typ. typ. max. J111; J112; J113 6 pF 22 pF 28 pF 3 pF 6 ns 13 ns 15 ns 35 ns VGS = 0 V ok, halfpage 10% VDD 10 nF 50 10 F RL 1 F Vi 90% toff tf 90% Vo MBK289 VGS off DUT 50 SAMPLING SCOPE 50 ton tr 10% MBK288 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. July 1993 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads J111; J112; J113 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 July 1993 5 Philips Semiconductors Product specification N-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values J111; J112; J113 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1993 6 |
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